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  x02xxxa ? january 1995 sensitive gate scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tl= 60 c 1.25 a i t(av) mean on-state current (180 conduction angle) tl= 60 c 0.8 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 25 a tp = 10 ms 22.5 i 2 t i 2 t value for fusing tp = 10 ms 2.5 a 2 s di/dt critical rate of rise of on-state current i g =10ma di g /dt = 0.1 a/ m s. 30 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 2mm from case 260 c absolute ratings (limiting values) to92 (plastic) i t(rms) = 1.25a v drm = 200v to 800v low i gt < 200 m a features symbol parameter voltage unit bdmn v drm v rrm repetitive peak off-state voltage t j = 125 cr gk =1k w 200 400 600 800 v the x02xxxa series of scrs uses a high performance top glass pnpn technology. these parts are intended for general purpose applications where low gate sensitivity is required. description k g a 1/5 free datasheet http://www.datasheetlist.com/
p g (av) = 0.2 w p gm = 3 w (tp = 20 m s) i gm = 1.2 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 150 c/w rth(j-l) junction to leads for dc 60 c/w thermal resistances symbol test conditions sensitivity unit 02 03 05 i gt v d =12v (dc) r l =140 w tj= 25 c min 20 20 m a max 200 200 50 v gt v d =12v (dc) r l =140 w tj= 25 c max 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj= 125 c min 0.1 v v rgm i rg =10 m a tj= 25 c min 8 v tgd v d =v drm i tm =3xi t(av ) di g /dt = 0.1a/ m si g = 10ma tj= 25 c typ 0.5 m s i h i t = 50ma r gk =1k w tj= 25 c max 5 ma i l i g =1ma r gk =1k w tj= 25 c max 6 ma v tm i tm = 2.5a tp= 380 m s tj= 25 c max 1.45 v i drm i rrm v d =v drm r gk =1k w v r =v rrm tj= 25 c max 5 m a tj= 110 c max 200 m a dv/dt v d =67%v drm r gk =1k w tj= 110 c typ 15 20 15 v/ m s tq i tm =3xi t(av )v r =35v di/dt=10a/ m s tp=100 m s dv/dt=2v/ m s v d = 67%v drm r gk =1 k w tj= 110 c max 100 m s electrical characteristics ordering information x0203ma scr top glass current package : a = to92 voltage sensitivity ? x02xxxa 2/5 free datasheet http://www.datasheetlist.com/
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 p (w) 360 o = 180 o = 120 o =90 o =60 o =30 o dc i (a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i (a) t(av) = 180 o dc tlead ( c) o fig.3 : average on-state current versus lead tem- perature. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -70 -90 -110 p (w) tlead ( c) o tamb ( c) o rth(j-l) rth(j-a) fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and tlead). 1e-3 1e-2 1e-1 1 e+0 1 e+1 1e +2 5 e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp (s) fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 100 0 0 5 10 15 20 25 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? x02xxxa 3/5 free datasheet http://www.datasheetlist.com/
110 1 10 100 i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.544.5 0.1 1 10 100 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =1.05v rt =0.150 fig.8 : on-state characteristics (maximum values). ? x02xxxa 4/5 free datasheet http://www.datasheetlist.com/
package mechanical data to92 (plastic) d f a e b a c ref. dimensions millimeters inches typ. min. max. typ. min. max. a 1.35 0.053 b 4.7 0.185 c 2.54 0.100 d 4.4 4.8 0.173 0.189 e 12.7 0.500 f 3.7 0.146 a 0.45 0.017 marking : type number weight : 0.2 g information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. ? x02xxxa 5/5 free datasheet http://www.datasheetlist.com/


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